(Hong Kong)
Product Summary
The SAMSUNG’s S3C44B0X01-ED80 16/32-bit RISC microprocessor is designed to provide a cost-effective and high performance micro-controller solution for hand-held devices and general applications.
Parametrics
S3C44B0X01-ED80 absolute maximum ratings: (1)DC Supply Voltage: 3.6 V; (2)DC Input Voltage: 3.3 V Input buffer to 4.6 V; (3)DC Input Voltage: 3.3 V buffer to 4.6 V; (4)Latch-up Current: ± 200 mA; (5)Storage Temperature: - 40 to 125 ℃.
Features
S3C44B0X01-ED80 features: (1)Little/Big endian(selectable by an external pin); (2)Address space: 32Mbytes per each bank (total 256MB:8 banks); (3)Programmable access size(8/16/32-bit) for all banks; (4)Total 8 memory banks: 6 memory banks for ROM, SRAM etc, 2 memory banks for ROM, SRAM, FP/EDO/SDRAM etc; (5)7 fixed memory bank start address and programmble bank size; (6)1 flexible memory bank start address and programmable bank size; (7)Programmable access cycles for all memory banks; (8)External wait to extend the bus cycles; (9)Supports self-refresh mode in DRAM/SDRAM for power-down; (10)Supports asymmetrically or symmetrically addressable DRAM.
Diagrams
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S3C4510B |
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S3C4530A |
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Negotiable |
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S3C49F9X |
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Negotiable |
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