Product Summary
The M29W320ET70N6E is a 32 Mbit (4Mb×8 or 2Mb×16)non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)supply. On power-up the memory defaults to its Read mode. The M29W320ET70N6E has an extra 32 KWord (×16 mode) or 64 KByte (×8 mode) block, the Extended Block, that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information. The memory is offered in TSOP48 (12×20mm), and TFBGA48 (6×8mm, 0.8mm pitch)packages. The memory is supplied with all the bits erased.
Parametrics
M29W320ET70N6E absolute maximum ratings: (1)TBIAS Temperature Under Bias: min=-50℃, max=125℃; (2)TSTG Storage Temperature: min=-65℃, max=150℃; (3)TLEAD Lead Temperature during Soldering: max=260℃; (4)VIO Input or Output Voltage: min=-0.6V, max=VCC +0.6 V; (5)VCC Supply Voltage: min=-0.6V, max=4V ; (6)VID Identification Voltage: min=-0.6, max=13.5V; (7)VPP Program Voltage: min=-0.6, max=13.5V.
Features
M29W320ET70N6E features: (1)supply voltage: vcc = 2.7v to 3.6v for program, erase; (2)and read; vpp =12v for fast program (optional)access times: 70, 90ns; (3)programming time: 10μs per byte/word typical; double word/ quadruple byte program; (4)memory blocks: memory array: 63 main blocks; 8 parameter blocks (top or bottom location); (5)erase suspend and resume modes: read and program another block during erase suspend; (6)unlock bypass program command: faster production/batch programming; (7)vpp/wp pin for fast program and write protect; (8)temporary block unprotection mode.
Diagrams
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![]() M29W320ET70N6E |
![]() STMicroelectronics |
![]() Flash STD FLASH 32 MEG |
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![]() Negotiable |
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