(Hong Kong)
Product Summary
The IS62C1024L-70Q is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW(deselected), the IS62C1024L-70Q assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. The IS62C1024L-70Q is available in 32-pin plastic SOP and TSOP (type 1) packages.
Parametrics
IS62C1024L-70Q absolute maximum ratings: (1)Terminal Voltage with Respect to GND:–0.5V to +7.0V; (2)Storage Temperature:–65℃ to +150℃; (3)Power Dissipation:1.5W; (4)DC Output Current (LOW):20mA.
Features
IS62C1024L-70Q features: (1)High-speed access time: 35, 70 ns; (2)Low active power: 450 mW (typical); (3)Low standby power: 150 μW (typical) CMOS standby; (4)Output Enable (OE) and two Chip Enable(CE1 and CE2) inputs for ease in applications; (5)Fully static operation: no clock or refresh required; (6)TTL compatible inputs and outputs; (7)Single 5V (±10%) power supply.
Diagrams
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 IS62C1024L-70QI |
Other |
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Data Sheet |
Negotiable |
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IS620 |
Other |
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Data Sheet |
Negotiable |
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IS621 |
Other |
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Data Sheet |
Negotiable |
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IS62C10248AL-55TLI-TR |
ISSI |
SRAM 8M (1Mx8) 55ns Async SRAM 5v |
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IS62C1024AL |
Other |
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Data Sheet |
Negotiable |
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IS62C1024AL-35QI |
ISSI |
SRAM 1Mb 128K x 8 35ns 5v Async SRAM 5v |
Data Sheet |
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IS62C1024AL-35QI-TR |
ISSI |
SRAM 1Mb 128K x 8 35ns 5v Async SRAM 5v |
Data Sheet |
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