(Hong Kong)
Product Summary
The IS61WV10248BLL-10TLI is a high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61WV10248BLL-10TLI is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. The IS61WV10248BLL-10TLI operates from a single power supply and all inputs are TTL-compatible. The IS61WV10248BLL-10TLI is available in 48 ball mini BGA and 44-pin TSOP (Type II) packages. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Parametrics
IS61WV10248BLL-10TLI absolute maximum ratings: (1)Terminal Voltage with Respect to GND:–0.5V to VDD+0.5V; (2)VDD Relates to GND:–0.3V to 4.0V; (3)Storage Temperature:–65℃ to +150℃; (4)Power Dissipation:1.0W.
Features
IS61WV10248BLL-10TLI features: (1)High-speed access times: 8, 10, 20 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single power supply:VDD 2.4V to 3.6V, speed = 10ns for Vcc = 2.4V to 3.6V, speed = 8ns for Vcc = 3.3V + 5%; (9)Packages available:48-ball miniBGA (9mm x 11mm), 44-pin TSOP(Type II); (10)Industrial and Automotive Temperature Support; (11)Lead-free available.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IS61WV10248BLL-10TLI |
ISSI |
SRAM 8Mb 1Mb x 8 10ns Async SRAM 3.3v |
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IS61WV10248BLL-10TLI-TR |
ISSI |
SRAM 8Mb 1Mb x 8 10ns Async SRAM 3.3v |
Data Sheet |
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