M29W640GB70NA6E

64 Mbit non-volatile memory, TSOP-48, -0.6 to 4V, Low power consumption

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Price:: US $1.47~1.52 / piece [Get Latest Price]

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PartNumber:: M29W640GB70NA6E

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-24

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Part Number:M29W640GB70NA6E
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Product Summary

The M29W640GB70NA6E is a 64 Mbit (8Mb×8 or 4Mb×16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The M29W640GB70NA6E is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

Parametrics

M29W640GB70NA6E absolute maximum ratings: (1)TBIAS Temperature Under Bias: min=-50℃, max=125℃; (2)TSTG Storage Temperature: min=-65℃, max=150℃; (3)VIO Input or Output Voltage: min=-0.6V, max=VCC +0.6 V; (4)VCC Supply Voltage: min=-0.6V, max=4V ; (5)VID Identification Voltage: min=-0.6, max=13.5V; (6)VPP Program Voltage: min=-0.6, max=13.5V.

Features

M29W640GB70NA6E features: (1)Supply Voltage: VCC = 2.7 to 3.6 V for Program/Erase/Read; VPP =12 V for Fast Program (optional); (2)Asynchronous Random/Page Read: Page Width: 4 words; Page Access: 25 ns; Random Access: 60 ns, 70 ns, 90 ns; (3)Fast Program commands: 2 word/4 byte Program (without VPP=12 V); 4 word/8 byte Program (with VPP=12 V); 16 word/32 byte Write Buffer; (4)Programming time: 10μs per byte/word typical; Chip Program time: 10 s (4-word Program); (5)Memory organization: Eight 8 Kbytes Boot blocks (top or bottom)127 Main blocks, 64 Kbytes each.