Product Summary

The BSS84LT1G is a 130mA, 50V power MOSFET. The miniature surface mount MOSFET reduces power loss conserve energy, making it ideal for use in small power management circuitry. Typical applications of BSS84LT1G are DC-DC converters, load switching, power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones.

Parametrics

BSS84LT1G absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: 50 Vdc; (2)Gate-to-Source Voltage - Continuous VGS: ± 20 Vdc; (3)Drain Current-Continuous @ TA = 25℃ ID: 130mA; -Pulsed Drain Current (tp ≤ 10 μs) IDM: 520mA; (4)Total Power Dissipation @ TA = 25℃ PD: 225 mW; (5)Operating and Storage Temperature Range TJ, Tstg: -55 to 150 ℃; (6)Thermal Resistance-Junction-to-Ambient RθJA: 556 ℃/W; (7)Maximum Lead Temperature for Soldering Purposes, for 10 seconds; (8)TL: 260 ℃.

Features

BSS84LT1G features: (1)Energy Efficient; (2)Miniature SOT-23 Surface Mount Package Saves Board Space; (3)Pb-Free Package is Available.

Diagrams

BSS84LT1G pin assignment

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSS84LT1G
BSS84LT1G
ON Semiconductor
MOSFET 50V 130mA P-Channel
Data Sheet
0-1: $0.25
1-25: $0.14
25-100: $0.10
100-500: $0.06
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSS80
BSS80
Other

Data Sheet
Negotiable 
BSS806N H6327
BSS806N H6327

MOSFET N-CH 20V 2.3A SOT23
Data Sheet
0-1: $0.37
1-10: $0.27
10-25: $0.21
25-100: $0.16
100-250: $0.11
250-500: $0.09
500-1000: $0.07
BSS806N L6327
BSS806N L6327
Infineon Technologies
MOSFET N-Channel 20V MOSFET
Data Sheet
Negotiable 
BSS806NH6327XT
BSS806NH6327XT
Infineon Technologies
MOSFET OptiMOS 2 Small Signal Transistor
Data Sheet
0-1: $0.24
1-10: $0.19
10-100: $0.13
100-500: $0.09
BSS80BTA
BSS80BTA
Diodes Inc. / Zetex
Transistors Bipolar (BJT) -
Data Sheet
Negotiable 
BSS80BTC
BSS80BTC
Diodes Inc. / Zetex
Transistors Bipolar (BJT) -
Data Sheet
Negotiable