(Hong Kong)
Product Summary
The IS62WV51216BLL-55TLI is a high-speed, 8M bit static RAM organized as 512K words by 16 bits. It is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The IS62WV51216BLL-55TLI is packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm) and 44-Pin TSOP (TYPE II).
Parametrics
IS62WV51216BLL-55TLI absolute maximum ratings: (1)Terminal Voltage with Respect to GND:–0.2V to VDD+0.3V; (2)Temperature Under Bias:–40℃ to +85℃; (3)VDD Related to GND:–0.2V to +3.8V; (4)Storage Temperature:–65℃ to +150℃; (5)Power Dissipation:1.0W.
Features
IS62WV51216BLL-55TLI features: (1)High-speed access time: 45ns, 55ns; (2)CMOS low power operation: 36 mW (typical) operating, 12 μW(typical) CMOS standby; (3)TTL compatible interface levels; (4)Single power supply:2.5V to 3.6V VDD; (5)Fully static operation: no clock or refresh required; (6)Three state outputs; (7)Data control for upper and lower bytes; (8)Industrial temperature available; (9)Lead-free available.
Diagrams
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 IS62WV51216BLL-55TLI |
ISSI |
SRAM 8Mb 512Kx16 55ns Async SRAM |
Data Sheet |
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IS62WV51216BLL-55TLI-TR |
ISSI |
SRAM 8Mb 512Kx16 55ns Async SRAM |
Data Sheet |
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