(Hong Kong)
Product Summary
The IS61LV10248-10T is a very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61LV10248-10T is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS61LV10248-10T operates from a single 3.3V power supply and all inputs are TTL compatible. The IS61LV10248-10T is available in 48 ball mini BGA, 36-ball mini BGA, and 44-pin TSOP (Type II) packages.
Parametrics
IS61LV10248-10T absolute maximum ratings: (1)Terminal Voltage with Respect to GND:–0.5V to VDD+0.5V; (2)VDD Relates to GND:–0.3V to 4.0V; (3)Storage Temperature:–65℃ to +150℃; (4)Power Dissipation:1.0W.
Features
IS61LV10248-10T features: (1)High-speed access times: 8, 10 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single 3.3V power supply; (9)Packages available: 48-ball miniBGA (9mm x 11mm), 36-ball miniBGA (9mm x 11mm), 44-pin TSOP (Type II); (10)Lead-free available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IS61LV10248-10T |
ISSI |
SRAM 8Mb 1Mb x 8 10ns |
Data Sheet |
Negotiable |
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|
IS61LV10248-10TI |
ISSI |
SRAM 8Mb 1Mb x 8 10ns |
Data Sheet |
Negotiable |
|
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|
IS61LV10248-10TLI |
ISSI |
SRAM 8Mb 1Mb x 8 10ns |
Data Sheet |
Negotiable |
|
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|
IS61LV10248-10TLI-TR |
ISSI |
SRAM 8Mb 1Mb x 8 10ns |
Data Sheet |
Negotiable |
|
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|
IS61LV10248-10T-TR |
ISSI |
SRAM 8Mb 1Mb x 8 10ns |
Data Sheet |
Negotiable |
|
||||
|
IS61LV10248-10TI-TR |
ISSI |
SRAM 8Mb 1Mb x 8 10ns |
Data Sheet |
Negotiable |
|
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