Product Summary

The IS61C6416AL-12TLI is high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using high-performance CMOS technology of ISSI. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.

Parametrics

IS61C6416AL-12TLI absolute maxing ratings: (1)VTERM Terminal Voltage with Respect to GND: –0.5 to +7.0 V; (2)TSTG Storage Temperature: –65 to +150 ℃; (3)PT Power Dissipation: 1.5 W; (4)IOUT DC Output Current (LOW): 20 mA.

Features

IS61C6416AL-12TLI features: (1)High-speed access time: 12 ns, 15ns; (2)Low Active Power: 175 mW (typical); (3)Low Standby Power: 1 mW (typical) CMOS standby; (4)TTL compatible interface levels; (5)Single 5V ±10% power supply; (6)Fully static operation: no clock or refresh required; (7)Available in 44-pin SOJ package and 44-pin TSOP (Type II); (8)Commercial, Industrial and Automotive temperature ranges available; (9)Lead-free available.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IS61C6416AL-12TLI
IS61C6416AL-12TLI
ISSI
SRAM 1Mb 64Kx16 12ns 5v Async SRAM
Data Sheet
0-1: $1.56
1-25: $1.40
25-100: $1.25
100-500: $1.09
IS61C6416AL-12TLI-TR
IS61C6416AL-12TLI-TR
ISSI
SRAM 1Mb 64Kx16 12ns 5v Async SRAM
Data Sheet
0-1000: $1.16
1000-2000: $1.15
2000-5000: $1.06